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GaN-based single-nanowire devices

Rudeesun Songmuang and Eva Monroy.

in III-Nitride Semiconductors and their Modern Devices

August 2013; p ublished online January 2014 .

Chapter. Subjects: Condensed Matter Physics. 16680 words.

This chapter presents a summary of new device concepts incorporating GaN nanowires (NWs) as active media. The text is structured as follows: nanowire synthesis, energy conversion,...

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Direct observation of piezoelectric fields in GaN/InGaN/GaN strained quantum wells

J. S. Barnard and D. Cherns.

in Microscopy

January 2000; p ublished online January 2000 .

Journal Article. Subjects: Biological Sciences. 0 words.

Off-axis electron holography is used to examine a single thin InGaN quantum well in GaN viewed in cross-section. The results show a phase offset across the well, which, under weakly...

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Epitaxial growth and benefits of GaN on silicon

Armin Dadgar and Alois Krost.

in III-Nitride Semiconductors and their Modern Devices

August 2013; p ublished online January 2014 .

Chapter. Subjects: Condensed Matter Physics. 18402 words.

In the past decade, GaN-on-silicon has advanced from a laboratory curiosity to a competitive alternative to GaN-on-sapphire and SiC for light-emitters, and is at present the favored...

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Optical and structural properties of InGaN light-emitters on non-polar and semipolar GaN

Michael Kneissl and Tim Wernicke.

in III-Nitride Semiconductors and their Modern Devices

August 2013; p ublished online January 2014 .

Chapter. Subjects: Condensed Matter Physics. 18213 words.

One of the most critical issues for InGaN-based LEDs and laser diodes is the presence of large piezoelectric fields along the (0001) direction. These can be significantly reduced or...

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Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy

Shigeyasu Tanaka, Kentaro Aoyama, Mikio Ichihashi, Shigeo Arai, Yoshio Honda and Nobuhiko Sawaki.

in Microscopy

August 2007; p ublished online August 2007 .

Journal Article. Subjects: Biological Sciences. 1792 words.

An electron-beam-induced-current technique has been applied to scanning transmission electron microscopy to characterize GaN/AlGaN/n-Si heterostructures. The structure was formed by...

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d(GA·TC)<sub>n</sub> microsatellite DNA sequences enhance homologous DNA recombination in SV40 minichromosomes

Ariadna Benet, Gemma Mollà and Fernando Azorín.

in Nucleic Acids Research

December 2000; p ublished online December 2000 .

Journal Article. Subjects: Chemistry; Biochemistry; Bioinformatics and Computational Biology; Genetics and Genomics; Molecular and Cell Biology. 4165 words.

The genomic distribution of the abundant eukaryotic d(GA·TC)n DNA microsatellite suggests that it could contribute to DNA recombination. Here, it is shown that this type of microsatellite...

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Sample Preparation of GaN-Based Materials on a Sapphire Substrate for STEM Analysis

Hanako Okuno, Masaki Takeguchi, Kazutaka Mitsuishi, Xing J. Guo and Kazuo Furuya.

in Microscopy

January 2008; p ublished online December 2007 .

Journal Article. Subjects: Biological Sciences. 2979 words.

In this work, a detailed TEM sample preparation recipe based on a wedge polishing technique for GaN-based materials is presented. The obtained samples have atomically flat surfaces without...

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Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films

Woong Lee, Kentaro Watanabe, Kazuhiro Kumagai, Seunghwan Park, Hyunjae Lee, Takafumi Yao, Jiho Chang and Takashi Sekiguchi.

in Microscopy

February 2012; p ublished online December 2011 .

Journal Article. Subjects: Biological Sciences. 2308 words.

The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature...

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Observation of the potential distribution in GaN-based devices by a scanning electron microscope

Takahiro Karumi, Shigeyasu Tanaka and Takayoshi Tanji.

in Microscopy

November 2014; p ublished online November 2014 .

Journal Article. Subjects: Biological Sciences. 9 words.

Mapping of the potential distribution using a scanning electron microscope (SEM) has been reported in recent years [1,2] for semiconductors such as Si, GaAs and InP. But, there are no such...

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Compositional modulation in In<sub> <i>x</i> </sub>Ga<sub>1−<i>x</i> </sub>N: TEM and X-ray studies

Zuzanna Liliental-Weber, Dmitri N. Zakharov, Kin M. Yu, Joel W. Ager, Wladyslaw Walukiewicz, Eugene E. Haller, Hai Lu and William J. Schaff.

in Microscopy

June 2005; p ublished online August 2005 .

Journal Article. Subjects: Biological Sciences. 4877 words.

Transmission Electron Microscopy (TEM) and X-ray diffraction (XRD) have been used to study compositional modulation in In x Ga1−x N layers grown with...

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