Chapter

General considerations of the electrostatic boundary conditions in oxide heterostructures

Takuya Higuchi and Harold Y. Hwang

in Multifunctional Oxide Heterostructures

Published in print August 2012 | ISBN: 9780199584123
Published online January 2013 | e-ISBN: 9780191745331 | DOI: http://dx.doi.org/10.1093/acprof:oso/9780199584123.003.0007
General considerations of the electrostatic boundary conditions in oxide heterostructures

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This chapter presents basic electrostatic features that arise in oxide heterostructures, which vary the ionic charge stacking sequence. In close relation to the analysis of the stability of polar surfaces and semiconductor heterointerfaces, the variation of the dipole moment across a heterointerface plays a key role in determining its stability. Different self-consistent assignments of the unit cell are presented, allowing the polar discontinuity picture to be recast in terms of an equivalent local charge neutrality picture. The latter is helpful in providing a common framework with which to discuss electronic reconstructions, local-bonding considerations, crystalline defects, and lattice polarization on an equal footing, all of which are the subject of extensive current investigation.

Keywords: oxide; heterostructure; surface; interface; polar; reconstructions; electrostatics

Chapter.  13208 words.  Illustrated.

Subjects: Condensed Matter Physics

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