High-<i>κ</i> gate dielectrics for advanced CMOS

Suman Datta and Darrell G. Schlom

in Multifunctional Oxide Heterostructures

Published in print August 2012 | ISBN: 9780199584123
Published online January 2013 | e-ISBN: 9780191745331 | DOI:
High-κ gate dielectrics for advanced CMOS

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The shrinkage of the transistor dimensions (Moore's law) has led to tremendous improvements in digital circuit speed and multi-core microprocessor performance. At the same time, however, it has also led to an exponential growth in the static power consumption of transistors due to quantum mechanical tunneling through an ever-thinner SiO2 gate dielectric. At the turn of the twenty-first century, this spurred an intensive effort to find an alternative to SiO2 with a higher dielectric constant (K) to temper this gate leakage current. This chapter reviews the high-K materials research that is enabling Moore's law to continue beyond SiO2. It explains the novel process integration schemes invented to allow the incorporation of high-K/metal-gate stack into advanced CMOS. It outlines the physics of the reliability of the high-K materials. The chapter ends with a discussion on the physics of the characterization of the interface between high-K dielectric and high mobility channel materials such as compound semiconductors.

Keywords: high-K dielectric; high-K cmos; metal-gate CMOS; high-K interface; III-V interface; III-V mosfet

Chapter.  8854 words.  Illustrated.

Subjects: Condensed Matter Physics

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