Chapter

FeFET and ferroelectric random access memories

Hiroshi Ishiwara

in Multifunctional Oxide Heterostructures

Published in print August 2012 | ISBN: 9780199584123
Published online January 2013 | e-ISBN: 9780191745331 | DOI: http://dx.doi.org/10.1093/acprof:oso/9780199584123.003.0012
FeFET and ferroelectric random access memories

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This chapter presents both the history and the current status of ferroelectric random access memory (FeRAM). First, it states that there are two types of FeRAMs (capacitor-type and FET-type (FeFET)) and that only the capacitor-type FeRAM is now commercially available. Section 2 discusses the properties of ferroelectric films such as Pb(Zr,Ti)O3, SrBi2Ta2O9, and BiFeO3 from a viewpoint of FeRAM application. Section 3 describes cell structures and operation principle of the capacitor-type FeRAMs. It is also explains that some new cell structures have been proposed in addition to the conventional 1T1C and 2T2C-type cells. Section 4 discusses the characteristics of FeFETs, citing that improvement of the data retention characteristics is one of the most important issues for commercializing FeFETs.

Keywords: fefet; feram; memory; ferroelectric; fatigue; imprint; retention; remnant polarization; coercive field

Chapter.  8663 words.  Illustrated.

Subjects: Condensed Matter Physics

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