Chapter

Channels of radiative recombination in semiconductors

Ivan Pelant and Jan Valenta

in Luminescence Spectroscopy of Semiconductors

Published in print February 2012 | ISBN: 9780199588336
Published online May 2012 | e-ISBN: 9780191738548 | DOI: http://dx.doi.org/10.1093/acprof:oso/9780199588336.003.0005
Channels of radiative recombination in semiconductors

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Channels of radiative recombination in bulk crystalline semiconductors: a short overview is at first given, then the following processes and their microscopic origin are analyzed: recombination of free electron–hole pairs (both in direct and in indirect bandgap); recombination free electron(hole)–neutral acceptor(donor); recombination of donor–acceptor pairs; two‐photon excited luminescence; luminescence from semiconductors doped with transition metal and rare earth ions. The accent is put on typical lineshape (e.g. Maxwell–Boltzmann) and intensity dependence of each particular process. The role of the density of states, the transition matrix element and suitable occupancy in bands is addressed. Selected examples of experimental emission spectra illustrate the exposition. Discussion of various types of excitons and their radiative recombination is postponed to Chapter 7.

Keywords: free electron–hole pairs; Maxwell–Boltzmann lineshape; free electron(hole)–neutral acceptor(donor); donor–acceptor pairs; two-photon excitation; transition metal and rare earth ions emission

Chapter.  12824 words.  Illustrated.

Subjects: Atomic, Molecular, and Optical Physics

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