Chapter

Luminescence of disordered semiconductors

Ivan Pelant and Jan Valenta

in Luminescence Spectroscopy of Semiconductors

Published in print February 2012 | ISBN: 9780199588336
Published online May 2012 | e-ISBN: 9780191738548 | DOI: http://dx.doi.org/10.1093/acprof:oso/9780199588336.003.0009
Luminescence of disordered semiconductors

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Luminescence of disordered (amorphous) semiconductors is due to a different microscopic mechanism compared to those being active in the luminescence of crystalline counterparts with long-range order. Electron and hole tail states, originating from dangling bonds, play the decisive role. Features typical for the amorphous semiconductor luminescence are discussed, namely: peculiar temperature dependence driven by the demarcation energy and distribution of luminescence decay times. Two theoretical models describing spectral shape of the emission band are examined: the phonon broadening model and the disorder broadening model. Theoretical band shapes are compared with experimental spectra found in amorphous elemental semiconductors. The concept of geminate and non-geminate electron–hole pairs is briefly debated. Multiple nonradiative recombination paths are mentioned as well as luminescence of impurities and defects.

Keywords: dangling bonds; tail states; temperature dependence; demarcation energy; distribution of decay times; phonon broadening; disorder broadening; geminate recombination; non-geminate recombination

Chapter.  9429 words.  Illustrated.

Subjects: Atomic, Molecular, and Optical Physics

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