Stimulated emission and lasing in low-dimensional structures

Ivan Pelant and Jan Valenta

in Luminescence Spectroscopy of Semiconductors

Published in print February 2012 | ISBN: 9780199588336
Published online May 2012 | e-ISBN: 9780191738548 | DOI:
Stimulated emission and lasing in low-dimensional structures

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Stimulated emission and lasing can be achieved easily in a number of semiconductor nanostructures. This chapter gives an overview of a series of physical mechanisms that were found experimentally to give rise to positive optical gain in quantum wells, quantum wires and nanocrystals. In quantum wells, these are radiative recombination of localized excitons, LO-phonon assisted exciton recombination and electron–hole plasma luminescence. In quantum wires the data are rather scarce; localized excitons and electron–hole plasma appears to be involved in lasing. Separately treated are the cases of nanocrystals dispersed randomly in a matrix and that of heterostructures with ordered quantum dots (grown by Stranski–Krastanow method). Exciton and biexciton mechanisms of optical gain in quantum dots are analyzed. The crucial competing role of Auger recombination is expressed via the filling factor. Prospects of random lasing in semiconductor nanostructures are outlined.

Keywords: optical gain; quantum wells; quantum wires; quantum dots; localized excitons; LO-phonon assisted exciton recombination; electron–hole plasma recombination; filling factor; Stranski–Krastanow growth; random lasing

Chapter.  10149 words.  Illustrated.

Subjects: Atomic, Molecular, and Optical Physics

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