Chapter

Tunneling in normal-state structures: I

E. L. Wolf

in Principles of Electron Tunneling Spectroscopy

Second edition

Published in print November 2011 | ISBN: 9780199589494
Published online January 2012 | e-ISBN: 9780191731334 | DOI: http://dx.doi.org/10.1093/acprof:oso/9780199589494.003.0002

Series: International Series of Monographs on Physics

Tunneling in normal-state structures: I

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This chapter describes basic tunnel junction types and summarizes applicable calculational approaches. The junction types include metal insulator metal (MIM) junctions, metal-insulator-semiconductor junctions, Schottky barriers, pn (Esaki) junctions, vacuum tunnelling, and vacuum tunnelling from a spherical tip. The primary calculational approaches are stationary state methods and transfer Hamiltonian methods. In all cases one seeks the dependence of current I and conductance dI/dV on voltage V. The treatment is extended from ideal barrier models to barriers with defects which including resonant barrier levels and localized trap states to support two-step tunnelling. A spherical model for the tip of the scanning tunnelling microscope STM and a single-atom model of the STM tip are described. The spatial resolution in both cases is estimated.

Keywords: current; voltage; conductance; barrier; tip; STM; Schottky Resolution

Chapter.  25634 words.  Illustrated.

Subjects: Condensed Matter Physics

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