Chapter

Nitrides, Phosphides, Antimonides and Bismides

John Orton and Tom Foxon

in Molecular Beam Epitaxy

Published in print June 2015 | ISBN: 9780199695829
Published online August 2015 | e-ISBN: 9780191748844 | DOI: http://dx.doi.org/10.1093/acprof:oso/9780199695829.003.0007
Nitrides, Phosphides, Antimonides and Bismides

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In the 1980s and 1990s, many semiconductor materials were grown by MBE. Nitrides were of interest for visible LEDs, lasers and for high-power transistors. Problems arose from the lack of lattice-matched substrates and from the large internal electric fields resulting from their Wurtzite crystal structure. MBE made possible the growth of zinc blende films with improved properties. Highly mismatched alloys such as GaPN and GaAsN, grown by MBE, are unusual in that adding N reduces the band gap. Adding Bi to GaAs does the same. Such materials show promise for making fibre-optic lasers. AlGaInP, lattice-matched to GaAs substrates, is important for red, yellow and green LEDs and lasers. GaP, grown on Si substrates, is of interest for combining optical and electronic functions. The antimonides show promise when combined with InAs in high-electron mobility devices.

Keywords: nitrides; phosphides; antimonides; bismides; highly mismatched alloys

Chapter.  20058 words.  Illustrated.

Subjects: History of Science and Technology

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