Journal Article

Low voltage FE‐STEM for characterization of state‐of‐the‐art silicon SRAM

Mine Nakagawa, Robert Dunne, Hidemi Koike, Mitsugu Sato, Juan J. Pérez‐Camacho and Barry J. Kennedy

in Microscopy

Published on behalf of The Japanese Society of Microscopy

Volume 51, issue 1, pages 53-57
Published in print March 2002 | ISSN: 2050-5698
Published online March 2002 | e-ISSN: 2050-5701 | DOI: https://dx.doi.org/10.1093/jmicro/51.1.53
Low voltage FE‐STEM for characterization of state‐of‐the‐art silicon SRAM

Show Summary Details

Preview

Low voltage (30 kV) field emission scanning transmission electron microscopy (FE‐STEM) has been employed in the characterization of state‐of‐the‐art semiconductor static random access memory (SRAM) using specimens prepared at several different thicknesses (70–180 nm). A focused ion beam (FIB) system, a FIB‐SEM compatible specimen holder and an in‐lens FE‐SEM have been employed for alternating between FIB milling and SEM/STEM imaging. As a result, ion implanted atom damage during manufacturing, grains in aluminium interconnects, poly silicon gates, thin metal barriers and a thin gate oxide layer were observed by low voltage FE‐STEM.

Keywords: STEM; in‐lens FESEM; FIB

Journal Article.  0 words. 

Subjects: Biological Sciences

Full text: subscription required

How to subscribe Recommend to my Librarian

Users without a subscription are not able to see the full content. Please, subscribe or login to access all content. subscribe or login to access all content.