Journal Article

Quantitative TEM of point defects in Si

D. J. Eaglesham, V. C. Venezia, H.-J. Gossmann and A. Agarwal

in Microscopy

Published on behalf of The Japanese Society of Microscopy

Volume 49, issue 2, pages 293-298
Published in print January 2000 | ISSN: 2050-5698
Published online January 2000 | e-ISSN: 2050-5701 | DOI:
Quantitative TEM of point defects in Si

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We review the use of transmission electron microscopy (TEM) to provide a quantitative measurement of both vacancy and interstitial clusters in ionimplanted silicon. Interstitials agglomerate into rod-like defects on {311} planes, and the evaporation of these defects can be directly correlated to the diffusion enhancements observed during annealing of ion-damaged silicon.Vacancy clusters are easily detected in TEM once they have been labelled using a Au-diffusion technique. The combination of the two approaches provides a quantitative test for models of implantation and annealing in silicon. Detailed models for point defect behaviour, which include Ostwaldripening and the surface recombination velocity, reproduce all of the crucial features of the observed defect annealing.

Keywords: interstitial; vacancy; {311} planes; silicon

Journal Article.  0 words. 

Subjects: Biological Sciences

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