Journal Article

Innovational radiation sensor by integrating AL<sub>2</sub>O<sub>3</sub>:C optically stimulated luminescent dosemeter and GaN detectors

Tai-Chang Chen, Kunakorn Poochinda and Thomas G. Stoebe

in Radiation Protection Dosimetry

Volume 119, issue 1-4, pages 380-385
Published in print September 2006 | ISSN: 0144-8420
Published online May 2006 | e-ISSN: 1742-3406 | DOI: http://dx.doi.org/10.1093/rpd/nci546
Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors

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We report a new dosimetry concept that is built on an earlier integrated sensor concept by our group at University of Washington to integrate a radiation-dosimetry-quality Al2O3:C and a high quantum-efficiency GaN-based p-i-n photodiode on one side, and light emitting diodes (LEDs) on the opposite side as the stimulation source. The performance of the sensor has been evaluated by computer simulation, the performance of GaN photodiodes and studying the GaN films. The absorption spectrum of the GaN film was measured and indicated that the GaN photodiodes would not respond to the output wavelengths of the stimulating LEDs. The electrical properties and the performance of GaN p-i-n photodiode under irradiation were simulated. The results showed that the sensor offered comparable radiation sensitivity to current technologies and could be operated in active mode.

Journal Article.  2850 words.  Illustrated.

Subjects: Nuclear Chemistry, Photochemistry, and Radiation

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