Journal Article

Atomic structure observation of silicon carbide using HRTEM

Eriko Takuma, Hideki Ichinose and Fu‐Rong Chen

in Microscopy

Published on behalf of The Japanese Society of Microscopy

Volume 51, issue 5, pages 297-302
Published in print October 2002 | ISSN: 2050-5698
Published online October 2002 | e-ISSN: 2050-5701 | DOI: https://dx.doi.org/10.1093/jmicro/51.5.297
Atomic structure observation of silicon carbide using HRTEM

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Atomic‐resolution high‐resolution high‐voltage transmission electron microscopy was applied to the chemical structure analysis of silicon carbide. Each atomic column was imaged in dark contrast. Silicon and carbon were distinguished from each other in image contrast, i.e. silicon appeared in darker contrast and carbon appeared in lighter contrast. For the projected potential image to provide chemical structure information, it was estimated that the specimen thickness needs to be less than 5 nm. The precise atomic columnar site was determined by using the maximum entropy method.

Keywords: silicon carbide; atomic resolution TEM; chemical structure image; maximum entropy method; projected potential imaging

Journal Article.  0 words. 

Subjects: Biological Sciences

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