Journal Article

Atomic Resolution Electronic Structure in Silicon-Based Semiconductors

P. E. Batson

in Microscopy

Published on behalf of The Japanese Society of Microscopy

Volume 45, issue 1, pages 51-58
Published in print February 1996 | ISSN: 2050-5698
e-ISSN: 2050-5701 | DOI: https://dx.doi.org/10.1093/oxfordjournals.jmicro.a023412
Atomic Resolution Electronic Structure in Silicon-Based Semiconductors

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An experimental method for obtaining conduction band electronic structure from the silicon L2,3 absorption edge is reviewed. The method uses Spatially Resolved Electron Energy Loss Spectroscopy in conjunction with a field emission Scanning Transmission Electron Microscope. The best spectroscopic resolution obtained is 160 meV with an energy scale accuracy of ±20 meV using 120 keV electrons. The spectroscopy is combined with High Angle Annular Dark Field imaging with a 0.2-nm diameter probe to obtain nearly atomic resolution point spectroscopic analyses. Atomic bonding at a Si/SiO2 interface, conduction bandstructure in the relaxed GexSi1−x alloy system and conduction band offsets in nanometer thick strained quantum wells have been obtained. Future work aims at relating defect electronic structure with directly obtained electronic structure.

Keywords: EELS; STEM; electronic structure; ADF imaging; GeSi alloys

Journal Article.  0 words. 

Subjects: Biological Sciences

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