Journal Article

Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor

Yutaka Ohno, Mitsuji Hirata, Seiji Takeda, Ryoji Fujimoto and Ryuichiro Oshima

in Microscopy

Published on behalf of The Japanese Society of Microscopy

Volume 45, issue 5, pages 380-387
Published in print October 1996 | ISSN: 2050-5698
e-ISSN: 2050-5701 | DOI: https://dx.doi.org/10.1093/oxfordjournals.jmicro.a023455
Atomic Structure of a Defect Colony in Silicon Introduced during Neutron Irradiation in the JOYO Reactor

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The structure of extended defects in a silicon crystal introduced during fission-neutron irradiation at 700 K in the JOYO fast breeder-type reactor have been examined by transmission electron diffraction using imaging plates and high-resolution electron microscopy. Defects of different nature, i.e. {113} self-interstitial, and vacancy Frank and stacking fault tetrahedra defects, were observed in the defect colony. This observation revealed a novel distribution of extended defects; that defects of different nature coexist in a microscopic area rather than being mutually annihilated.

Keywords: silicon; vacancy; high-resolution electron microscopy; imaging plate; neutron irradiation

Journal Article.  0 words. 

Subjects: Biological Sciences

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